sheet resistivity meaning in Chinese
薄层电阻率
表面电阻率
片电阻率
Examples
- The sheet resistivity dramatically decreases to 106 ? / ? . the sheet hole concentration increases about 109 / cm2 order of magnitude and the hall mobility increases too . te doping changes < wp = 7 > cdte thin films into good p - type semiconductor and improves electrical properties of the films
，面载流子浓度增大到109 / cm2的数量级，迁移率亦增大到104cm2 / v . s ，掺杂te元素改善了cdte薄膜的电学性质，使其变为良好的p型半导体。 - The average partical size of bismuth ruthenate and pbo - b _ 2o _ 3 - sio _ 2 glass was researched . the smaller bismuth ruthenate partical is , sheet resistivity is lower and temperature coefficient of resistance ( tcr ) is more positive and the refiring change ratio is nearer to zero . the limit size of bismuth ruthenate partical is 0 . 56 m
研究了各相粉体平均粒径对膜层性能的影响,结果表明:钌酸铋平均粒径越小,膜层的方阻值越小,电阻温度系数偏正,重烧变化率越接近零值,球磨工艺的极限平均粒径为0 . 56 m 。 - Bismuth ruthenate and silver were selected as conductor phases and the mixture of calcium oxide - alumina - silicon dioxide ( cao - al _ 2o _ 3 - sio _ 2 ) glass and lead oxide - boron oxide - silicon dioxide ( pbo - b _ 2o _ 3 - sio _ 2 ) glass was selected as inorganic binder phases . it was found that , with the increasing of volume fraction of silver and conductor phase , sheet resistivities descend and there are critical thresholds
实验发现,随着功能相百分含量的增加,电阻膜层的方阻值逐渐减小,存在两个临界阈值,电阻温度系数偏向正值;功能相中银百分含量增加,膜层的方阻值逐渐减小,有一个临界阈值,电阻温度系数偏向正值。 - Pure cdte films have high electrical resistivity and are slightly p - type , due to the formation of cd vacancies in the cdte lattice acting as acceptor centers . the sheet resistivity of films are about 1010 ? / ? . the sheet hole concentration is 105 - 6 / cm2 and the hall mobility is about hundreds cm2 / v . s . the structural and electrical properties of cdte films doped te are markedly different from pure cdte films
，面载流子浓度约105 - 6 / cm2 ，载流子迁移率为几百cm2 / v . s ；掺杂te元素后，薄膜衍射峰强增大，薄膜结构上出现了第二种相成分?六方结构的te ，由衍射峰强判断该相比例较小，同时cdte薄膜的衍射峰向低角度偏移，晶格< wp = 5 >常数增大。